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| inchange semiconductor product specification silicon npn power transistors BU2527AF description ? ? with to-3pfa package ? high voltage ? high speed switching applications ? for use in horizontal deflection circuits of high resolution monitors pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7.5 v i c collector current (dc) 12 a i cm collector current-peak 30 a i b base current (dc) 8 a i bm base current-peak 12 a p tot total power dissipation t c =25 ?? 45 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn power transistors BU2527AF characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ;i b =0,l=25mh 800 v v (br)ebo emitter-base breakdown voltage i e =1ma ;i c =0 7.5 v v cesat collector-emitter saturation voltage i c =6a ;i b =1.2a 5.0 v v besat base-emitter saturation voltage i c =6a ;i b =1.2a 1.3 v i ces collector cut-off current v ce =bv ces; v be =0 t j =125 ?? 0.25 2.0 ma i ebo emitter cut-off current v eb =7.5v; i c =0 0.25 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 h fe-2 dc current gain i c =6a ; v ce =5v 5 9 c c collector capacitance v cb =10v;i e =0; f=1.0mhz 145 pf inchange semiconductor product specification 3 silicon npn power transistors BU2527AF package outline fig.2 outline dimensions (unindicated tolerance: ? 0.30mm) |
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